About this position
The FuN Lab has made significant advances in III–V colloidal quantum dots (CQDs) and extended-SWIR PbS materials for high-performance infrared photodetectors and imaging systems. We invite applications for two postdoctoral positions focused on next-generation SWIR and room-temperature MWIR photodetectors based on III–V, Ag₂Te, and related CQDs.
We seek a postdoctoral researcher to develop novel SWIR and exploratory room-temperature MWIR photodetectors based on CQDs. The position focuses on device architecture design, charge-transport-layer engineering, dark-current suppression, metasurface integration, optical-field manipulation, and low-noise detector characterization. The successful candidate will translate optimized CQD solids into high-performance infrared photodetectors with enhanced light absorption, carrier extraction, and operational stability.
Key Objectives
- Design novel infrared photodetector architectures integrating CQD thin films with metasurfaces, optical cavities, plasmonic resonators, and other light-management structures.
- Develop high-performance SWIR CQD photodetectors using III–V CQDs and related materials.
- Explore room-temperature MWIR detection using narrow-bandgap CQDs and heterostructures.
- Design device architectures that suppress dark current and enhance photocarrier extraction.
- Study charge transport, recombination, noise, response speed, and operational stability.
- Develop photodiode and LED platforms for infrared detection.
- Establish quantitative structure–property–device relationships in collaboration with the surface-chemistry postdoc.
Members only · Free to join
Sign in to see the full opening
Get the entry requirements, funding, the supervisor's contact and a link to the original advert.
- Requirements
- How to apply
- Contact details
Free forever No credit card 30-second sign-up